Title :
Mechanisms of hydrogen release in the breakdown of SiO/sub 2/-based gate oxides
Author :
Suné, Jordi ; Wu, Ernest Y.
Author_Institution :
Departament d´´Enginyeria Electronica, Univ. Autonoma de Barcelona
Abstract :
The mechanisms of hydrogen release (HR) involved in the degradation and breakdown (BD) of SiO2-based gate dielectrics are studied by means of the analysis of charge to breakdown (QBD ) data versus electron energy, and comparing with scanning tunneling microscope (STM) experiments of H desorption from silicon surfaces. Our results reveal an important role of vibrational and electronic excitation mechanisms
Keywords :
desorption; dielectric thin films; electric breakdown; hydrogen; scanning tunnelling microscopy; silicon compounds; SiO2; desorption; electronic excitation mechanisms; gate dielectrics; gate oxides; hydrogen release mechanisms; scanning tunneling microscope; silicon surfaces; vibrational mechanisms; Anodes; Breakdown voltage; Degradation; Dielectric breakdown; Electric breakdown; Electrons; Hydrogen; Microelectronics; Silicon; Stress;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609359
