DocumentCode :
3442589
Title :
The roles of hydrogen and holes in trap generation and breakdown in ultra-thin SiON dielectrics
Author :
Nicollian, Paul E. ; Krishnan, Anand T. ; Bowen, Chris ; Chakravarthi, Srini ; Chancellor, Cathy A. ; Khamankar, Rajesh B.
Author_Institution :
Silicon Technol. Dev., Texas Instruments Inc., Dallas, TX
fYear :
2005
fDate :
5-5 Dec. 2005
Firstpage :
392
Lastpage :
395
Abstract :
We show for the first time that trap generation and breakdown in ultra thin SiON gate dielectrics are triggered by the release of two hydrogen species (H+ and H0) from the anode during TDDB stress
Keywords :
dielectric thin films; hole traps; hydrogen; silicon compounds; stress effects; H+; H0; SiON; TDDB stress; dielectric breakdown; hole traps; hydrogen species release; trap generation; ultra thin gate dielectrics; Anodes; Capacitance-voltage characteristics; Cathodes; Dielectric breakdown; Electric breakdown; Electron traps; Hydrogen; Low voltage; MOS devices; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
Type :
conf
DOI :
10.1109/IEDM.2005.1609360
Filename :
1609360
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3442589
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