Title :
A comprehensive investigation of gate oxide breakdown of P+Poly/PFETs under inversion mode
Author :
Wu, Ernest ; Suné, Jordi ; Lai, Wing ; Vayshenker, Alex ; Harmon, David
Author_Institution :
Microelectron. Div., IBM, Essex Junction, VT
Abstract :
Breakdown (BD) characteristics and electron transport across thin SiO2 films has been thoroughly investigated for P+Poly-Si gate/PFET devices stressed under inversion mode. We resolve the anomalies in TBD/QBD polarity dependence and shallower Weibull slopes commonly observed in PFET for TOX>2nm. For thin oxides (1.8nm<TOX<2.9nm), QBD data and Weibull slopes are found to be in excellent agreement with those of NFETs by considering valence-band electron tunneling. For ultra-thin oxides (T OX<1.8nm), using an improved new BD detection methodology, the derived QBD results show reasonable agreement with those of thick oxides
Keywords :
Weibull distribution; dielectric thin films; field effect transistors; semiconductor device breakdown; tunnelling; valence bands; NFET; PFET devices; SiO2; Weibull slopes; breakdown detection methodology; electron transport; gate oxide breakdown; inversion mode; thick oxides; ultra-thin oxides; valence-band electron tunneling; Anodes; Breakdown voltage; Current-voltage characteristics; Electric breakdown; Electrons; Low voltage; Microelectronics; Q measurement; Stress measurement; Tunneling;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609361
