A comprehensive investigation of gate oxide breakdown of P+Poly/PFETs under inversion mode

Author

Wu, Ernest ; Suné, Jordi ; Lai, Wing ; Vayshenker, Alex ; Harmon, David

Author_Institution

Microelectron. Div., IBM, Essex Junction, VT

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

396

Lastpage

399

Abstract

Breakdown (BD) characteristics and electron transport across thin SiO₂ films has been thoroughly investigated for P+Poly-Si gate/PFET devices stressed under inversion mode. We resolve the anomalies in T_BD/Q_BD polarity dependence and shallower Weibull slopes commonly observed in PFET for T_OX>2nm. For thin oxides (1.8nm<T_OX<2.9nm), Q_BD data and Weibull slopes are found to be in excellent agreement with those of NFETs by considering valence-band electron tunneling. For ultra-thin oxides (T _OX<1.8nm), using an improved new BD detection methodology, the derived Q_BD results show reasonable agreement with those of thick oxides

Keywords

Weibull distribution; dielectric thin films; field effect transistors; semiconductor device breakdown; tunnelling; valence bands; NFET; PFET devices; SiO₂; Weibull slopes; breakdown detection methodology; electron transport; gate oxide breakdown; inversion mode; thick oxides; ultra-thin oxides; valence-band electron tunneling; Anodes; Breakdown voltage; Current-voltage characteristics; Electric breakdown; Electrons; Low voltage; Microelectronics; Q measurement; Stress measurement; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609361

Filename

1609361