Title :
Theory of hydrogen-related levels in semiconductors and oxides
Author :
Van de Walle, Chris G.
Author_Institution :
Dept. of Mater., California Univ., Santa Barbara, CA
Abstract :
Hydrogen plays a major role in the electronic properties of semiconductors, oxides, and their interfaces. This paper reviews the present understanding of hydrogen interactions with materials, based on first-principles calculations, and describes how a relatively simple model allows predicting the electronic behavior of hydrogen in a wide range of semiconductors and oxides. Specific predictions are discussed for novel channel materials and gate oxides
Keywords :
doping profiles; electric properties; hydrogen; interface phenomena; semiconductor materials; channel materials; electronic properties; gate oxides; hydrogen interactions; interfaces; semiconductors; Bonding; Electrons; Elementary particle vacuum; Hydrogen; Impurities; Predictive models; Reservoirs; Semiconductor devices; Semiconductor materials; Silicon;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609362
