Title :
Degradation and breakdown of 0.9 nm EOT SiO/sub 2/ ALD HfO/sub 2/metal gate stacks under positive constant voltage stress
Author :
Degraeve, R. ; Kauerauf, T. ; Cho, M. ; Zahid, M. ; Ragnarsson, L-Å ; Brunco, D.P. ; Kaczer, B. ; Roussel, Ph ; De Gendt, S. ; Groeseneken, G.
Author_Institution :
IMEC, Leuven
Abstract :
By means of leakage current measurements, charge pumping and TDDB analysis, we construct a consistent model for the degradation and breakdown of 0.9 nm EOT atomic layer deposited (ALD) HfO2. During degradation, traps and two-trap clusters are formed in the HfO 2 giving rise to considerable SILC. The two-trap clusters subsequently wear out, finally leading to an abrupt hard breakdown. We demonstrate that 0.9 nm EOT ALD HfO2 is intrinsically reliable under constant voltage stress if hard breakdown is used as a failure criterion
Keywords :
atomic layer deposition; dielectric thin films; electric breakdown; failure analysis; hafnium compounds; interface states; leakage currents; reliability; silicon compounds; stress effects; 0.9 nm; HfO2; SiO2; TDDB analysis; atomic layer deposition; charge pumping; leakage current measurements; metal gate stacks; positive constant voltage stress; two-trap clusters; Atomic measurements; Breakdown voltage; Charge measurement; Charge pumps; Current measurement; Degradation; Electric breakdown; Hafnium oxide; Leakage current; Stress;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609364
