Title :
Fluorine incorporation into HfSiON dielectric for V/sub th/ control and its impact on reliability for poly-Si gate pFET
Author :
Inoue, M. ; Tsujikawa, S. ; Mizutani, M. ; Nomura, K. ; Hayashi, T. ; Shiga, K. ; Yugami, J. ; Tsuchimoto, J. ; Ohno, Y. ; Yoneda, M.
Author_Institution :
Process Technol. Dev. Div., RENESAS Technol. Corp., Hyogo
Abstract :
F incorporation into HfSiON dielectric using channel implantation technique is shown to be highly effective in lowering Vth and improving NBTI in poly-Si gate pFET. Mobility degradation is not accompanied and drive current is increased by 180%. From analytical and electrical characterization, the Vth shift is attributed to change in trap density
Keywords :
carrier mobility; dielectric materials; field effect transistors; fluorine; hafnium compounds; interface states; ion implantation; semiconductor device reliability; silicon compounds; voltage control; F; HfSiON; NBTI; channel implantation technique; dielectric material; drive current; fluorine incorporation; mobility degradation; pFET; poly-Si gate; reliability; trap density; voltage control; Atomic layer deposition; Dielectric materials; Doping; FETs; Fabrication; High K dielectric materials; Plasma displays; Plasma measurements; Plasma temperature; Reliability engineering;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609366
