Fluorine incorporation into HfSiON dielectric for V/sub th/ control and its impact on reliability for poly-Si gate pFET

Author

Inoue, M. ; Tsujikawa, S. ; Mizutani, M. ; Nomura, K. ; Hayashi, T. ; Shiga, K. ; Yugami, J. ; Tsuchimoto, J. ; Ohno, Y. ; Yoneda, M.

Author_Institution

Process Technol. Dev. Div., RENESAS Technol. Corp., Hyogo

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

413

Lastpage

416

Abstract

F incorporation into HfSiON dielectric using channel implantation technique is shown to be highly effective in lowering V_th and improving NBTI in poly-Si gate pFET. Mobility degradation is not accompanied and drive current is increased by 180%. From analytical and electrical characterization, the V_th shift is attributed to change in trap density

Keywords

carrier mobility; dielectric materials; field effect transistors; fluorine; hafnium compounds; interface states; ion implantation; semiconductor device reliability; silicon compounds; voltage control; F; HfSiON; NBTI; channel implantation technique; dielectric material; drive current; fluorine incorporation; mobility degradation; pFET; poly-Si gate; reliability; trap density; voltage control; Atomic layer deposition; Dielectric materials; Doping; FETs; Fabrication; High K dielectric materials; Plasma displays; Plasma measurements; Plasma temperature; Reliability engineering;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609366

Filename

1609366