Title :
High performance gate first HfSiON dielectric satisfying 45nm node requirements
Author :
Quevedo-Lopez, M.A. ; Krishnan, S.A. ; Kirsch, P.D. ; Li, H.J. ; Sim, J.H. ; Huffman, C. ; Peterson, J.J. ; Lee, B.H. ; Pant, G. ; Gnade, B.E ; Kim, M.J. ; Wallace, R.M. ; Guo, D. ; Bu, H. ; Ma, T.P.
Author_Institution :
Texas Instrum., Austin, TX
Abstract :
We show an ALD based HfSiON gate dielectric scaled to 1 nm EOT with excellent performance and reliability. Furthermore, the HfSiON dielectric films are integrated in a gate first approach that includes a 1000degC-5s anneal. It is also demonstrated that this 1 nm EOT HfSiON can achieve electron and hole mobilities comparable to that of SiON. This progress is enabled due to better understanding of the relationship between charge trapping, HfSiON thickness and crystallinity. Performance and reliability improvement is attributed to reduced charge trapping due to suppressed crystallization of the optimized HfSiON films
Keywords :
atomic layer deposition; dielectric thin films; electron mobility; hafnium compounds; hole mobility; interface states; reliability; silicon compounds; 1 nm; 1000 C; 45 nm; 5 s; ALD based gate dielectric; HfSiON; annealing processing; charge trapping; crystallization; dielectric films; electron mobility; hole mobility; Annealing; Crystallization; Dielectrics; Electrodes; Electron traps; Instruments; Leakage current; MOS devices; Microelectronics; Tin;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609369
