• DocumentCode
    3442785
  • Title

    Dramatic improvement of Ge p-MOSFET characteristics realized by amorphous zr-silicate/ge gate stack with excellent structural stability through process temperatures

  • Author

    Kamata, Yoshiki ; Kamimuta, Yuuichi ; Ino, Tsunehiro ; Iijima, Ryosuke ; Koyama, Masato ; Nishiyama, Akira

  • Author_Institution
    Corporate R&D Center, Toshiba Corp., Yokohama
  • fYear
    2005
  • fDate
    5-5 Dec. 2005
  • Firstpage
    429
  • Lastpage
    432
  • Abstract
    Ge diffusion into high-k layer is completely suppressed by taking advantage of thermally stable Zr-silicate/Ge structure. This leads to high muh of 210 cm 2/Vsec at 0.1M V/cm, which is two times higher than that of ZrO2/Ge and even 23% higher than the value for Si universal curve. EOT scalability of Zr-silicate/Ge gate stacks is comparable to that of ZrO2/Ge one
  • Keywords
    MOSFET; amorphous semiconductors; germanium; high-k dielectric thin films; hole mobility; passivation; silicon compounds; zirconium compounds; MOSFET; Zr-SiO-Ge; ZrO2-Ge; amorphous material; gate stacks; high-k layer; process temperatures; structural stability; Amorphous materials; Annealing; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Passivation; Spectroscopy; Structural engineering; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-7803-9268-X
  • Type

    conf

  • DOI
    10.1109/IEDM.2005.1609370
  • Filename
    1609370
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3442785