Title :
Dramatic improvement of Ge p-MOSFET characteristics realized by amorphous zr-silicate/ge gate stack with excellent structural stability through process temperatures
Author :
Kamata, Yoshiki ; Kamimuta, Yuuichi ; Ino, Tsunehiro ; Iijima, Ryosuke ; Koyama, Masato ; Nishiyama, Akira
Author_Institution :
Corporate R&D Center, Toshiba Corp., Yokohama
Abstract :
Ge diffusion into high-k layer is completely suppressed by taking advantage of thermally stable Zr-silicate/Ge structure. This leads to high muh of 210 cm 2/Vsec at 0.1M V/cm, which is two times higher than that of ZrO2/Ge and even 23% higher than the value for Si universal curve. EOT scalability of Zr-silicate/Ge gate stacks is comparable to that of ZrO2/Ge one
Keywords :
MOSFET; amorphous semiconductors; germanium; high-k dielectric thin films; hole mobility; passivation; silicon compounds; zirconium compounds; MOSFET; Zr-SiO-Ge; ZrO2-Ge; amorphous material; gate stacks; high-k layer; process temperatures; structural stability; Amorphous materials; Annealing; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Passivation; Spectroscopy; Structural engineering; Temperature;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609370
