Title :
Ultra-thin (EOT=3/spl Aring/) and low leakage dielectrics of La-alminate directly on si substrate fabricated by high temperature deposition
Author :
Suzuki, Masamichi ; Tomita, Mitsuhiro ; Yamaguchi, Takeshi ; Fukushima, Noburu
Author_Institution :
Corporate Res. & Dev. Center, Toshiba Corp., Kawasaki
Abstract :
Ultra-thin (0.31 nm) LaAlO3 gate dielectrics with excellent electrical characteristics were fabricated by a novel high temperature deposition process. The key to achieve it is to form stable La-O-Al bonds in as-deposited phase by high temperature deposition. That process suppresses the oxygen exchange for the diffusion and the resultant interface layer formation
Keywords :
MISFET; carrier mobility; dielectric thin films; interface states; lanthanum compounds; leakage currents; silicon; sputtered coatings; 0.31 nm; LaAlO3; diffusion; electrical characteristics; high temperature deposition process; interface layer formation; laminates; low leakage dielectrics; oxygen exchange; substrates; ultra-thin dielectrics; Annealing; Capacitance; Capacitors; Dielectric substrates; Electric variables; Laboratories; Large scale integration; Leakage current; Temperature; Thermal stability;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609371
