• DocumentCode
    3442998
  • Title

    Optical and thermal properties of In12Ga88N/GaN solar cells

  • Author

    Neufeld, Carl J. ; Cruz, Samantha C. ; Toledo, Nikholas G. ; Iza, Michael ; DenBaars, Steven P. ; Mishra, Umesh K.

  • Author_Institution
    Electr. & Comput. Eng. Dept., Univ. of California Santa Barbara, Santa Barbara, CA, USA
  • fYear
    2009
  • fDate
    7-12 June 2009
  • Abstract
    In this work we investigate the optical and thermal properties of In12Ga88N/GaN photovoltaic devices. These devices show very good solar cell characteristics with peak external quantum efficiency of 63%, open circuit voltage of 1.7 V, and a fill factor of 76%. Thermal measurements show no reduction in output power with increasing temperature up to 87°C.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; solar cells; wide band gap semiconductors; In12Ga88N-GaN; external quantum efficiency; fill factor; open circuit voltage; optical properties; photovoltaic device; solar cell; thermal properties; voltage 1.7 V; Circuits; Gallium nitride; Optical devices; Photovoltaic cells; Photovoltaic systems; Power generation; Power measurement; Solar power generation; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
  • Conference_Location
    Philadelphia, PA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-2949-3
  • Electronic_ISBN
    0160-8371
  • Type

    conf

  • DOI
    10.1109/PVSC.2009.5411356
  • Filename
    5411356
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3442998