Title :
Optical and thermal properties of In12Ga88N/GaN solar cells
Author :
Neufeld, Carl J. ; Cruz, Samantha C. ; Toledo, Nikholas G. ; Iza, Michael ; DenBaars, Steven P. ; Mishra, Umesh K.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of California Santa Barbara, Santa Barbara, CA, USA
Abstract :
In this work we investigate the optical and thermal properties of In12Ga88N/GaN photovoltaic devices. These devices show very good solar cell characteristics with peak external quantum efficiency of 63%, open circuit voltage of 1.7 V, and a fill factor of 76%. Thermal measurements show no reduction in output power with increasing temperature up to 87°C.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; solar cells; wide band gap semiconductors; In12Ga88N-GaN; external quantum efficiency; fill factor; open circuit voltage; optical properties; photovoltaic device; solar cell; thermal properties; voltage 1.7 V; Circuits; Gallium nitride; Optical devices; Photovoltaic cells; Photovoltaic systems; Power generation; Power measurement; Solar power generation; Temperature; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2009.5411356
