Title :
A study on a novel smoothing method by atomic layer epitaxy for microstructure fabrication
Author :
Hirose, S. ; Yoshida, A. ; Yamaura, M. ; Munekata, H.
Author_Institution :
Mech. Eng. Lab., MITI, Ibaraki, Japan
Abstract :
We prove that atomic layer epitaxy (ALE) provides a novel technique to smooth a relatively rough GaAs surface. The method has been applied successfully to smooth chemically etched V-grooved GaAs structures and selectively grown GaAs stripe structures The key advantage is that ALE is governed by two-dimensional island growth mode
Keywords :
III-V semiconductors; atomic force microscopy; atomic layer epitaxial growth; gallium arsenide; island structure; rough surfaces; semiconductor epitaxial layers; surface topography; surface treatment; AFM; GaAs; atomic layer epitaxy; chemically etched V-grooved structures; film thickness controllability; microstructure fabrication; relatively rough surface; selectively grown stripe structures; self-limiting process; smoothing method; two-dimensional island growth mode; Atomic layer deposition; Epitaxial growth; Epitaxial layers; Etching; Fabrication; Gallium arsenide; Microstructure; Rough surfaces; Smoothing methods; Surface roughness;
Conference_Titel :
Intelligent Processing and Manufacturing of Materials, 1999. IPMM '99. Proceedings of the Second International Conference on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5489-3
DOI :
10.1109/IPMM.1999.792480
