A GaAs based high performance transceiver front-end chipset for 5-6 GHz wireless applications

Author

Chakraborty, S. ; Lee, C.-H. ; Yoo, S. ; Heo, D. ; Raghavan, A. ; Mukherjee, D. ; Bhattacharjee, J. ; Laskar, J.

Author_Institution

Yamacraw Design Center, Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2001

fDate

2001

Firstpage

25

Lastpage

28

Abstract

This paper presents the development of a high performance broadband transceiver front-end chipset for 5-6 GHz wireless applications in a commercial GaAs MESFET process. The developed chipset include a power amplifier, mixer, VCO and LNA.. The developed chipsets are compliant to the IEEE 802.11a wireless LAN standard. The power amplifier shows a power gain of 14 dB, an output 1 dB compression power of 24 dBm, the LNA exhibits a 13.5 dB gain, 2.2 dB noise figure and an IIP3 of 2.8 dBm. The performances of the developed chipsets show significant linearity improvement over earlier implementations

Keywords

III-V semiconductors; MESFET integrated circuits; MMIC oscillators; MMIC power amplifiers; Schottky gate field effect transistors; gallium arsenide; microwave mixers; transceivers; voltage-controlled oscillators; wireless LAN; 14 dB; 2.2 dB; 5 to 6 GHz; GaAs; IEEE 802.11a wireless LAN standard; III-V semiconductor; IIP3; LNA; MESFET process; VCO; high performance transceiver front-end chipset; noise figure; power amplifier; power gain; wireless applications; Broadband amplifiers; Gain; Gallium arsenide; MESFETs; Noise figure; Power amplifiers; Standards development; Transceivers; Voltage-controlled oscillators; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Conference, 2001. RAWCON 2001. IEEE

Conference_Location

Waltham, MA

Print_ISBN

0-7803-7189-5

Type

conf

DOI

10.1109/RAWCON.2001.947489

Filename

947489