DocumentCode
3443279
Title
A new top structure concept for a trench-gate emitter implant Field-Stop IGBT
Author
Alessandria, A. ; Fragapane, L.
Author_Institution
STMicroelectronics, Catania, Italy
fYear
2010
fDate
14-16 June 2010
Firstpage
551
Lastpage
555
Abstract
In recent years, a new device concept has appeared in IGBT technology. It is a structure between a PT and an NPT device, with a low-doped emitter, where the fundamental role is played by the Field-Stop layer. In this paper, we have fixed some considerations about a proper design of the top structure; moreover, a new structure will be proposed to improve the electrical performances of the device.
Keywords
insulated gate bipolar transistors; semiconductor device models; IGBT; NPT device; field-stop layer; low-doped emitter; trench-gate emitter; Automation; Charge carrier lifetime; Consumer electronics; Electronics industry; Implants; Insulated gate bipolar transistors; Insulation; Power electronics; Switching loss; Voltage; IGBT; devices; simulations; technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Electrical Drives Automation and Motion (SPEEDAM), 2010 International Symposium on
Conference_Location
Pisa
Print_ISBN
978-1-4244-4986-6
Electronic_ISBN
978-1-4244-7919-1
Type
conf
DOI
10.1109/SPEEDAM.2010.5542150
Filename
5542150
Link To Document