Title :
Computational study of carbon nanotube p-i-n tunnel FETs
Author :
Koswatta, Siyuranga O. ; Nikonov, Dmitri E. ; Lundstrom, Mark S.
Author_Institution :
Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN
Abstract :
Reducing transistor leakage current by increasing the sub-threshold slope beyond the thermal limit (60mV/decade at room temperature) could alleviate the heat dissipation requirements of high-density ICs. This paper examines the potential of a carbon nanotube p-i-n tunnel FET for less than 60mV/dec operation. Both ballistic transport and transport with inelastic scattering are considered. The device performance is compared to that of a carbon nanotube n-i-n MOSFET. An extensive discussion on device optimization for p-i-n tunnel FETs is also presented
Keywords :
ballistic transport; field effect transistors; nanotube devices; tunnelling; ballistic transport; carbon nanotube; device optimization; heat dissipation alleviation; high-density integrated circuit; inelastic scattering; p-i-n tunnel FET; transistor leakage current reduction; Carbon nanotubes; Computer aided manufacturing; FETs; III-V semiconductor materials; Optical scattering; PIN photodiodes; Particle scattering; Phonons; Resonance light scattering; Tunneling;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609396
