• DocumentCode
    3443333
  • Title

    Bandstructure and orientation effects in ballistic Si and Ge nanowire FETs

  • Author

    Wang, Jing ; Rahman, Anisur ; Klimeck, Gerhard ; Lundstrom, Mark

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN
  • fYear
    2005
  • fDate
    5-5 Dec. 2005
  • Lastpage
    533
  • Abstract
    Using a semi-empirical, sp3d5s* tight-binding approach and a ´top-of-the-barrier´ ballistic FET model, we report full-band simulations of ballistic Si and Ge nanowire FETs with various channel orientations and wire diameters. We find that the nanowire FET performance displays a strong orientation and diameter dependence, and [110] is the optimum orientation for both Si and Ge nanowire FETs
  • Keywords
    band structure; elemental semiconductors; field effect transistors; germanium; nanowires; semiconductor device models; silicon; Ge; Si; ballistic FET model; ballistic nanowire FET; bandstructure effects; channel orientations; nanowire FET performance; orientation effects; wire diameters; Ballistic transport; Computational modeling; Displays; Electrostatics; FETs; MOSFETs; Scattering; Shape; Transistors; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-7803-9268-X
  • Type

    conf

  • DOI
    10.1109/IEDM.2005.1609399
  • Filename
    1609399
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3443333