Title :
Bandstructure and orientation effects in ballistic Si and Ge nanowire FETs
Author :
Wang, Jing ; Rahman, Anisur ; Klimeck, Gerhard ; Lundstrom, Mark
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN
Abstract :
Using a semi-empirical, sp3d5s* tight-binding approach and a ´top-of-the-barrier´ ballistic FET model, we report full-band simulations of ballistic Si and Ge nanowire FETs with various channel orientations and wire diameters. We find that the nanowire FET performance displays a strong orientation and diameter dependence, and [110] is the optimum orientation for both Si and Ge nanowire FETs
Keywords :
band structure; elemental semiconductors; field effect transistors; germanium; nanowires; semiconductor device models; silicon; Ge; Si; ballistic FET model; ballistic nanowire FET; bandstructure effects; channel orientations; nanowire FET performance; orientation effects; wire diameters; Ballistic transport; Computational modeling; Displays; Electrostatics; FETs; MOSFETs; Scattering; Shape; Transistors; Wire;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609399
