A dual band SiGe MMIC LNA and mixer with ground shield for WCDMA and CDMA applications

Author

Kim, Young-Gi ; Yoon, Shin-Young ; Kim, Hyuk ; Yoo, Seung-Hee ; Kim, Young-Gul ; Baek, Kyung-Sik ; Kim, Chang-Woo ; Cho, Deok-Ho ; Han, Tae-Hyeon ; Ryum, Byoung-Ryul

Author_Institution

Anyang Univ., South Korea

fYear

2001

fDate

2001

Firstpage

41

Lastpage

44

Abstract

A single chip 2.7 V dual band SiGe RF front end for 2140 MHz WCDMA and 882 MHz CDMA operation has been implemented by a standard SiGe bipolar process with an f_max of 50 GHz utilizing a ground shield layer structure upon low resistive silicon substrate. The LNAs are gain controllable single stage amplifiers with high linear characteristics. The mixer circuits are double balanced Gilbert (1997) type micro-mixers with differential IF buffer amplifiers

Keywords

Ge-Si alloys; MMIC amplifiers; MMIC mixers; UHF amplifiers; UHF integrated circuits; UHF mixers; bipolar MMIC; code division multiple access; differential amplifiers; 2.7 V; 2140 MHz; 50 GHz; 882 MHz; CDMA applications; MMIC mixer; SiGe; WCDMA applications; bipolar process; differential IF buffer amplifiers; double balanced Gilbert micro-mixers; dual band MMIC LNA; gain controllable single stage amplifiers; ground shield layer structure; linear characteristics; low resistive silicon substrate; microstrip line structures; mixer circuits; single chip RF front end; Circuits; Dual band; Germanium silicon alloys; Heterojunction bipolar transistors; MMICs; Multiaccess communication; Radio frequency; Silicon germanium; Substrates; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Conference, 2001. RAWCON 2001. IEEE

Conference_Location

Waltham, MA

Print_ISBN

0-7803-7189-5

Type

conf

DOI

10.1109/RAWCON.2001.947496

Filename

947496