DocumentCode :
3443386
Title :
Comparison of amorphous InZnO and polycrystalline ZnO:Al conductive layers for CIGS solar cells
Author :
Sundaramoorthy, R. ; Repins, I.L. ; Gennett, T. ; Pern, F.J. ; Albin, D. ; Li, Jian V. ; DeHart, C. ; Glynn, S. ; Perkins, J.D. ; Ginley, D.S. ; Gessert, T.
Author_Institution :
Nat. Renewable Energy Lab., Nat. Center for Photovoltaics, Golden, CO, USA
fYear :
2009
fDate :
7-12 June 2009
Abstract :
We investigated the optical and electrical properties of amorphous InZnO (IZO) as a potential replacement of Al-doped ZnO (AZO) conducting window layer for CuInGaSe2 (CIGS) solar cells. The device performance of CIGS devices with IZO of different thickness and sheet resistance was compared with that of CIGS standard devices with AZO. The results show that the optical and electrical properties of IZO were affected by deposition conditions, especially by the oxygen concentration, and thickness. Initial results on the CIGS solar cells showed that devices with IZO yield cell efficiencies comparable to that of the devices with standard AZO, when the sheet resistance of IZO was close to that of AZO.
Keywords :
II-VI semiconductors; aluminium; amorphous semiconductors; copper compounds; electrical resistivity; gallium compounds; indium compounds; semiconductor growth; solar cells; sputter deposition; ternary semiconductors; wide band gap semiconductors; zinc compounds; CuInGaSe2; InZnO; ZnO:Al; amorphous conductive layers; cell efficiencies; conducting window layer; deposition conditions; electrical properties; optical properties; oxygen concentration; polycrystalline conductive layers; sheet resistance; solar cells; Amorphous materials; Argon; Electric resistance; Fabrication; Glass; Laboratories; Optical films; Photovoltaic cells; Substrates; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
Type :
conf
DOI :
10.1109/PVSC.2009.5411376
Filename :
5411376
Link To Document :
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