Title :
Reduction in the operating current of high-power 660-nm AlGaInP laser diodes with an AlInP current blocking layer
Author :
Hiroyama, R. ; Inoue, D. ; Nomura, Y. ; Shono, M. ; Sawada, M.
Author_Institution :
Microelectron. Res. Center, Sanyo Electr. Co. Ltd., Osaka, Japan
Abstract :
Summary form only given. High-power 660-nm AlGaInP laser diodes with a stable transverse mode are indispensable as the light source of recordable or rewritable DVD systems. The window-mirror structure is effective for obtaining a high COD (catastrophic optical damage) level. We report on high-power 660 nm AlGaInP laser diodes with Zn-diffused window-mirrors and an AlInP current blocking layer. These laser diodes have demonstrated stable operation with the highest light output power to our knowledge of 80 mW for the real index guide structure.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser mirrors; laser modes; laser transitions; optical windows; quantum well lasers; waveguide lasers; 660 nm; 80 mW; AlGaInP; AlInP; AlInP current blocking layer; GaInP:Zn-AlGaInP:Zn; Zn-diffused window-mirrors; high catastrophic optical damage level; high-power 660-nm AlGaInP laser diodes; light output power; light source; operating current; real index guide structure; recordable DVD systems; rewritable DVD systems; stable operation; stable transverse mode; window-mirror structure; DVD; Diode lasers; Frequency; Gallium arsenide; Life testing; Optical recording; Optical refraction; Power generation; Quantum well lasers; Threshold current;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-662-1
DOI :
10.1109/CLEO.2001.947503
