Application of capacitance-based techniques to the characterization of multijunction solar cells

In this paper we intend to expand the portfolio of non-destructive techniques available for the individual characterization of the subcells in a monolithic multijunction stack. The goal is to explore the use of low-temperature, variable frequency, capacitance-based techniques to extract information of the minority carrier parameters, presence of traps and electronic defects in each subcell in the device. Despite this technique has been extensively applied for the characterization of thin-film materials and devices it has deserved little attention in the field of III-V multijunction solar cells.