Title :
Novel AlGaN/GaN dual-field-plate FET with high gain, increased linearity and stability
Author :
Ando, Yuji ; Wakejima, Akio ; Okamoto, Yasuhiro ; Nakayama, Tatsuo ; Ota, Kazuki ; Yamanoguchi, Katsumi ; Murase, Yasuhiro ; Kasahara, Kensuke ; Matsunaga, Kohji ; Inoue, Takashi ; Miyamoto, Hironobu
Author_Institution :
R&D Assoc. for Future Electron Devices, NEC Corp., Otsu
Abstract :
We have successfully developed a novel AlGaN/GaN FET with dual field-modulating-plates (FPs). The breakdown voltage is enhanced from 125 to 250 V by adding the second FP to the conventional FP structure. Benefiting from the first FP, no current collapse is observed simultaneously. Since the second FP effectively reduces feedback capacitance, this device provides a 3-dB higher gain along with increased linearity and stability. Under a 2.15-GHz W-CDMA modulation scheme, a dual-FP-FET with a 24-mm gate periphery achieved a state-of-the-art combination of 160-W output power and a 17.5-dB linear gain
Keywords :
III-V semiconductors; UHF field effect transistors; aluminium compounds; code division multiple access; gallium compounds; semiconductor device breakdown; 125 to 250 V; 160 W; 17.5 dB; 2.15 GHz; 24 mm; 3 dB; AlGaN-GaN; FP structure; W-CDMA modulation scheme; breakdown voltage; dual-FP-FET; dual-field-plate FET; feedback capacitance; field-modulating-plates; Aluminum gallium nitride; Capacitance; FETs; Feedback; Gain; Gallium nitride; Linearity; Multiaccess communication; Power generation; Stability;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609412
