High power, high AlGaN/GaN-HEMTs with novel powerbar design

Author

Lossy, Richard ; Liero, Armin ; Würfl, Joachim ; Tränkle, Günther

Author_Institution

Ferdinand-Braun-Inst. fiir Hochstfrequenztechnik, Berlin

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

580

Lastpage

582

Abstract

Gallium nitride transistors for high power microwave application are often limited by power loss due to extended transistor finger size. A new design for the gate supply is presented which allows for higher power gain compared to conventional transistor designs. Using this technique a linear gain of 20 dB is measured for a packaged power device delivering 28 Watt at 2GHz

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; microwave power transistors; power HEMT; 2 GHz; 20 dB; 28 W; AlGaN-GaN; gallium nitride transistors; high gain HEMT; high power microwave application; linear gain; power loss; powerbar design; Aluminum gallium nitride; Fingers; Gallium nitride; HEMTs; MODFETs; Microwave devices; Microwave transistors; Packaging; Passivation; Power transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609413

Filename

1609413

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3443600