Title :
High power, high AlGaN/GaN-HEMTs with novel powerbar design
Author :
Lossy, Richard ; Liero, Armin ; Würfl, Joachim ; Tränkle, Günther
Author_Institution :
Ferdinand-Braun-Inst. fiir Hochstfrequenztechnik, Berlin
Abstract :
Gallium nitride transistors for high power microwave application are often limited by power loss due to extended transistor finger size. A new design for the gate supply is presented which allows for higher power gain compared to conventional transistor designs. Using this technique a linear gain of 20 dB is measured for a packaged power device delivering 28 Watt at 2GHz
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; microwave power transistors; power HEMT; 2 GHz; 20 dB; 28 W; AlGaN-GaN; gallium nitride transistors; high gain HEMT; high power microwave application; linear gain; power loss; powerbar design; Aluminum gallium nitride; Fingers; Gallium nitride; HEMTs; MODFETs; Microwave devices; Microwave transistors; Packaging; Passivation; Power transistors;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609413
