Title :
Quantitatively accurate simulation of quantum semiconductor devices
Author :
Frensley, William R. ; Bowen, Robeert C. ; Fernando, Chernjing L. ; Klimeck, Gerhard ; Lake, Roger K.
Author_Institution :
Dept. of Electr. Eng., Texas Univ., Dallas, TX, USA
Abstract :
The quantum well resonant-tunneling diode has attracted a good deal of attention over the past few years, primarily because the active region of this device spans such a small length. Simplified quantum-mechanical models of this device abound, but these have been unsuccessful in quantitatively describing the device characteristics. We have found that agreement with experimental characteristics can be markedly improved by using more realistic energy-band and potential profile models
Keywords :
quantum interference devices; resonant tunnelling diodes; semiconductor device models; semiconductor quantum wells; energy-band profile; potential profile; quantum semiconductor device; quantum well resonant-tunneling diode; quantum-mechanical model; simulation; Crystalline materials; Dispersion; Gallium arsenide; Instruments; Lakes; Quantum mechanics; Resonance; Resonant tunneling devices; Semiconductor devices; Semiconductor diodes;
Conference_Titel :
Physics and Computer Modeling of Devices Based on Low-Dimensional Structures, 1995. Proceedings., International Workshop on
Conference_Location :
Aizu-Wakamatsu
Print_ISBN :
0-8186-7321-4
DOI :
10.1109/PCMDLS.1995.494459
