Proceedings modelling of SiC-PiN diode with adjust of ambipolar diffusion length

This article presents the development and implementation of a model for a silicon carbide PiN diode based on the physics of the semiconductor. The main novelty in this paper is modelling with Pspice the real stored charge inside SiC PiN diodes depending on the working regime of the device (turn-on, on-state, and turn-off). By means of this methodology a set of differential equations that models the main physical phenomena associated to the semiconductor device are obtained. The equations implemented in the electrical simulator can model, as the main goal, the behavior of the dynamics of the charges in the N- region of the PiN diode. The physical-based model allows predicting dynamic and static behaviours of the SiC PiN diode.