8-watt GaN HEMTs at millimeter-wave frequencies

Author

Wu, Y.-F. ; Moore, M. ; Saxler, A. ; Wisleder, T. ; Mishra, U.K. ; Parikh, P.

Author_Institution

Cree Santa Barbara Technol. Center, Goleta, CA

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

583

Lastpage

585

Abstract

Field-plated short-gate-length GaN HEMTs were developed for superior large-signal performance at millimeter-wave frequencies. 100-mum-wide devices achieved 8.6 W/mm power density at 40 GHz. Scaled-up, pre-matched 1.05-mm-wide devices generated 5.4 & 5.2 W output power with associated PAE of 36 & 31 % at 30 and 35 GHz, respectively. A 1.5-mm-wide device produced 8 W at 30 GHz with 31 % PAE, representing the state-of-the-art for GaN HEMTs at millimeter-wave frequencies

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; millimetre wave field effect transistors; wide band gap semiconductors; 1.05 mm; 100 micron; 30 GHz; 35 GHz; 40 GHz; 5.2 W; 5.4 W; 8 W; GaN; PAE; field-plated short-gate-length HEMT; high electron mobility transistors; millimeter-wave frequencies; power added efficiency; power density; Aluminum gallium nitride; Frequency; Gallium nitride; HEMTs; Lithography; MODFETs; Millimeter wave technology; Parasitic capacitance; Power generation; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609414

Filename

1609414

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3443614