Optical absorption of semiconductor quantum wells

Author

Willander, M. ; Fu, Y.

Author_Institution

Dept. of Phys. & Meas. Technol., Linkoping Univ., Sweden

fYear

1995

fDate

7-9 Nov 1995

Firstpage

6

Lastpage

13

Abstract

The envelope function theory is discussed to derive the proper expression of the photon-electron interaction, and thus the general expression of the optical absorption coefficient, in the multiple band scheme for the fast developing long wavelength quantum well infrared photodetectors. The real n-type AlAs/AlGaAs detector is investigated to understand the effects of electrostatic fields due to doping impurities and free carriers and the finite barrier height, while the optical transitions due to inter-band mixings are principal in p-type Ge_xSi_1-x detectors

Keywords

absorption coefficients; infrared detectors; light absorption; photodetectors; semiconductor quantum wells; AlAs-AlGaAs; GeSi; barrier height; doping impurities; electrostatic fields; envelope function theory; free carriers; interband mixing; long wavelength infrared photodetectors; multiple band structure; n-type AlAs/AlGaAs detector; optical absorption coefficient; optical transitions; p-type Ge_xSi_1-x detector; photon-electron interaction; semiconductor quantum wells; Conducting materials; Detectors; Doping; Electromagnetic wave absorption; Genetic expression; Impurities; Photonics; Physics; Quantum mechanics; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics and Computer Modeling of Devices Based on Low-Dimensional Structures, 1995. Proceedings., International Workshop on

Conference_Location

Aizu-Wakamatsu

Print_ISBN

0-8186-7321-4

Type

conf

DOI

10.1109/PCMDLS.1995.494460

Filename

494460