Title :
Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress
Author :
Sozza, A. ; Dua, C. ; Morvan, E. ; -Poisson, M. A diForte ; Delage, S. ; Rampazzo, F. ; Tazzoli, A. ; Danesin, F. ; Meneghesso, G. ; Zanoni, E. ; Curutchet, A. ; Malbert, N. ; Labat, N. ; Grimbert, B. ; De Jaeger, J.-C.
Author_Institution :
Alcatel-THALES III-V Lab., Marcoussis
Abstract :
A long-term 3000-hour test under on-state conditions (VDS =25V, 6W/mm constant dissipated power) and off-state conditions (V DS=46V, VGS=-6V) on GaN/AlGaN/GaN HEMTs is presented. Trapping presence and hot-electrons effect are characterized by means of low-frequency techniques (low-frequency noise measurements, transconductance frequency dispersion, gate-lag). The on-state stress shows the most important degradation. Since our measurements point out to the creation of traps in the gate-to-drain surface region during the stress, this degradation is ascribed to the effect of hot-electrons
Keywords :
III-V semiconductors; aluminium compounds; electron traps; gallium compounds; high electron mobility transistors; hot carriers; semiconductor device testing; stress effects; wide band gap semiconductors; 25 V; 3000 hour; 46 V; 6 V; GaN-AlGaN-GaN; HEMT device; gate-lag; gate-to-drain surface region; hot-electron effect; low-frequency noise measurements; low-frequency techniques; off-state hot-electron stress; on-state hot-electron stress; transconductance frequency dispersion; Aluminum gallium nitride; Degradation; Frequency measurement; Gallium nitride; HEMTs; Low-frequency noise; MODFETs; Noise measurement; Stress; Testing;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609416
