Title :
Highly linear low voltage GaAs pHEMT MMIC switches for multimode wireless handset applications
Author :
Roberts, Michael ; Albasha, Luffi ; Bosch, Wolfgang ; Gotch, Damian ; Mayock, James ; Sandhiya, Pallavi ; Bisby, Ian
Author_Institution :
Global Technol. Group, Filtronic Plc., Saltaire, UK
Abstract :
A true 3 V highly linear low loss single pole five throw (SP5T) switch for multimode wireless handset applications is presented. By using advanced Filtronic pHEMT technology with extremely low leakage current and low channel resistance it is possible to achieve very low harmonic levels at maximum GSM power levels (P2ND<-35 dBm at PIN=34.5 dBm) by using four FETs in series and yet still achieve insertion losses of 0.5 dB at 900 MHz. Increasing the number of FETs also allows for 24 dB of isolation to be achieved at 900 MHz
Keywords :
HEMT integrated circuits; III-V semiconductors; UHF integrated circuits; cellular radio; field effect MMIC; field effect transistor switches; gallium arsenide; leakage currents; low-power electronics; microwave switches; telephone sets; 0.5 dB; 900 MHz; FET; Filtronic pHEMT technology; GaAs; III V semiconductor; SP5T switch; UHF; isolation; linear low voltage pHEMT MMIC switches; low channel resistance; low harmonic levels; low leakage current; maximum GSM power levels; multimode wireless handset; single pole five throw switch; FETs; GSM; Gallium arsenide; Leakage current; Low voltage; MMICs; PHEMTs; Power system harmonics; Switches; Telephone sets;
Conference_Titel :
Radio and Wireless Conference, 2001. RAWCON 2001. IEEE
Conference_Location :
Waltham, MA
Print_ISBN :
0-7803-7189-5
DOI :
10.1109/RAWCON.2001.947512
