• DocumentCode
    3443734
  • Title

    First-principles modeling of double-gate UTSOI MOSFETs

  • Author

    Evans, Matthew H. ; Caussanel, Matthieu ; Schrimpf, Ronald D. ; Pantelides, Sokrates T.

  • Author_Institution
    Dept. of Phys. & Astron., Vanderbilt Univ., Nashville, TN
  • fYear
    2005
  • fDate
    5-5 Dec. 2005
  • Lastpage
    600
  • Abstract
    This paper presents a first-principles approach to modeling wavefunction penetration and transport in UTSOI MOSFETs that includes accurate quantum mechanics and atomic-scale structures with no empirical parameters. Applications to interface roughness and to Hf atoms near the Si-SiO2/HfO2 interface in double-gate UTSOI MOSFETs with SiO2 or HfO2 gate dielectrics are presented
  • Keywords
    MOSFET; dielectric materials; hafnium; hafnium compounds; interface roughness; semiconductor device models; silicon; silicon compounds; silicon-on-insulator; wave functions; Si-SiO2-HfO2; UTSOI MOSFET; atomic-scale structures; double-gate MOSFET; first-principles modeling; gate dielectrics; interface roughness; quantum mechanics; wavefunction penetration; Bonding; Charge carrier density; Dielectric devices; Dielectric materials; Electrostatics; Hafnium oxide; MOSFETs; Particle scattering; Quantum computing; Quantum mechanics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-7803-9268-X
  • Type

    conf

  • DOI
    10.1109/IEDM.2005.1609420
  • Filename
    1609420
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3443734