Title :
First-principles modeling of double-gate UTSOI MOSFETs
Author :
Evans, Matthew H. ; Caussanel, Matthieu ; Schrimpf, Ronald D. ; Pantelides, Sokrates T.
Author_Institution :
Dept. of Phys. & Astron., Vanderbilt Univ., Nashville, TN
Abstract :
This paper presents a first-principles approach to modeling wavefunction penetration and transport in UTSOI MOSFETs that includes accurate quantum mechanics and atomic-scale structures with no empirical parameters. Applications to interface roughness and to Hf atoms near the Si-SiO2/HfO2 interface in double-gate UTSOI MOSFETs with SiO2 or HfO2 gate dielectrics are presented
Keywords :
MOSFET; dielectric materials; hafnium; hafnium compounds; interface roughness; semiconductor device models; silicon; silicon compounds; silicon-on-insulator; wave functions; Si-SiO2-HfO2; UTSOI MOSFET; atomic-scale structures; double-gate MOSFET; first-principles modeling; gate dielectrics; interface roughness; quantum mechanics; wavefunction penetration; Bonding; Charge carrier density; Dielectric devices; Dielectric materials; Electrostatics; Hafnium oxide; MOSFETs; Particle scattering; Quantum computing; Quantum mechanics;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609420
