Title :
Physical mechanism of work function modulation due to impurity pileup at Ni-FUSI/SiO(N) interface
Author :
Tsuchiya, Yoshinori ; Yoshiki, Masahiko ; Koyama, Masato ; Kinoshita, Atsuhiro ; Koga, Junji
Author_Institution :
Corporate R&D Center, Toshiba Corp., Yokohama
Abstract :
The physical mechanism of work function modulation caused by impurity pileup at Ni-FUSI/SiO(N) interface were investigated. We proposed and verified a new model which can explain the Phim-eff modulation both nMOS (As P and Sb) and pMOS (B). In our model, the position and concentration of impurity at interface determine the direction and the extent of Phim-eff modulation. We have also developed a new method to introduce impurity atoms at the interface after FUSI gate formation, in which the amount of Phim-eff modulation is higher than that for the conventional process
Keywords :
MIS structures; doping profiles; nickel compounds; semiconductor doping; silicon compounds; work function; FUSI gate formation; Ni-SiO(N); impurity atoms; impurity pileup; interface impurity concentration; interface impurity position; nMOS; pMOS; physical mechanism; work function modulation; Doping; Electrodes; Fabrication; Impurities; Laboratories; Large scale integration; MOS devices; Phase modulation; Research and development; Silicides;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609427
