Title :
Low noise amplifier design for CDMA receivers
Author :
Watanabe, Glenn ; Lau, Henry ; Holbrook, R. ; Leung, Kelvin
Author_Institution :
Semicond. Products Sector, Motorola Inc., Tempe, AZ, USA
Abstract :
The design and simulation of low noise, high linearity RF amplifiers for code division multiple access (CDMA) receivers are presented. The circuit topologies utilize a high performance BiCMOS process with high frequency NMOS to implement a stepped gain low noise amplifier. The low parasitic NMOS switch ensures that there is good matching at the input and output impedances in both gain and bypass modes
Keywords :
BiCMOS integrated circuits; UHF amplifiers; UHF integrated circuits; code division multiple access; network topology; radio receivers; 2 GHz; CDMA receivers; RF amplifier; bypass modes; circuit topologies; code division multiple access; gain modes; high frequency NMOS; high performance BiCMOS process; input impedances; low noise amplifier design; low parasitic NMOS switch; output impedances; simulation; stepped gain low noise amplifier; BiCMOS integrated circuits; Circuit noise; Circuit simulation; Circuit topology; Linearity; Low-noise amplifiers; MOS devices; Multiaccess communication; Radiofrequency amplifiers; Switches;
Conference_Titel :
Radio and Wireless Conference, 2001. RAWCON 2001. IEEE
Conference_Location :
Waltham, MA
Print_ISBN :
0-7803-7189-5
DOI :
10.1109/RAWCON.2001.947528
