Growth of semiconductor nanowires using rapidly and uniformly generated metal growth centers

Here we report on the fabrication of GaAs network of nanowires on silicon (111) substrates using gold metal nanoparticle mediated catalyst. Highly ordered regular arrays of gold nanoparticles are formed by vacuum evaporation of Au through a nanosphere spin coated surfaces. The paper examines and compares the structural properties of GaAs nanowires formed by chemical beam epitaxy and molecular beam epitaxy techniques on these surfaces scanning electron microscopy and transmission electron microscopy analysis indicate distinct features of the two techniques and the ability of CBE to yield wetting layer free arrays of nanowires.