Title :
Lanthanide and Ir-based dual metal-gate/HfAlON CMOS with large work-function difference
Author :
Yua, D.S. ; Chin, Albert ; Wu, C.H. ; Li, M.-F. ; Zhu, C. ; Wang, S.J. ; Yoo, W.J. ; Hung, B.F. ; McAlister, S.P.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu
Abstract :
Metallic diffusion through high-K HfO2, caused by high temperature metal-nitride decomposition, was reduced by using robust HfAlON. Useful dual effective work-function (phim,eff) of 4.25 and 5.15 eV are obtained in TaTb0.2N/HflON and Ir/HfAlON at 1.7 nm EOT. Good dual phim,eff of 4.15 and 4.9 eV are also obtained in YbxSi/HfAlON and IrxSi/HfAlON FUSI-gates by reduced metal diffusion at lower temperature
Keywords :
aluminium compounds; hafnium compounds; high-k dielectric thin films; iridium compounds; lanthanum; surface diffusion; tantalum compounds; work function; ytterbium compounds; 4.25 eV; 4.9 eV; 5.15 eV; CMOS; HfO2; Ir-based dual metal-gate; IrxSi-HfAlON FUSI gates; IrSi-HfAlON; La; TaTb0.2N-HfAlON; YbxSi-HfAlON FUSI gates; YbSi-HfAlON; high temperature decomposition; high-k dielectric films; lanthanide based dual metal-gate; large work-function difference; metal-nitride decomposition; metallic diffusion; Bonding; CMOS technology; Councils; Electrodes; Hafnium oxide; Implants; Leakage current; MOS capacitors; MOS devices; Plasma temperature;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609430
