DocumentCode :
3443993
Title :
Transient response of CdS/CdTe cells with heavy doping of Si, P and Cu
Author :
Nawarange, Amruta ; Liu, Xiangxin ; Compaan, Alvin D.
Author_Institution :
Dept. of Phys. & Astron., Univ. of Toledo, Toledo, OH, USA
fYear :
2009
fDate :
7-12 June 2009
Abstract :
We have studied magnetron sputtered CdS/CdTe cells having CdTe or CdS intentionally doped with either Si, P or Cu. This study was done to understand the effects of doping on the transient behavior and J-V performance of CdTe cells. Different chemical group elements were selected to see their comparative effects on cell response. In comparison with undoped CdTe, the cells with Si or P doping show enhanced transient effects. Although cells with pure CdS/CdTe show a slight increase in current with time during AM1.5 exposure, the doped CdTe cells exhibit short-circuit current decay or recovery with time. This device behavior will be related to the properties of the CdTe:P, CdS:Si and CdTe:Si. We found that doping of Cu in CdTe is strongly detrimental to cell performance compared to about same amount of doping (~1%) with Si and P..
Keywords :
II-VI semiconductors; cadmium compounds; copper; phosphorus; silicon; solar cells; sputtered coatings; wide band gap semiconductors; AM1.5 exposure; CdS-CdTe; CdS-CdTe:Cu; CdS-CdTe:P; CdS-CdTe:Si; CdS:Si-CdTe; CdS:Si-CdTe:Si; J-V performance; doping effects; magnetron sputtered cells; short-circuit current decay; short-circuit current recovery; transient response; Astronomy; Chemical elements; Commercialization; Doping; Fluorescence; Impurities; Photovoltaic cells; Physics; Technological innovation; Transient response;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
Type :
conf
DOI :
10.1109/PVSC.2009.5411409
Filename :
5411409
Link To Document :
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