Title :
MOdeling of SI-based thin film triple-junction solar cells
Author :
Xiao, Y.G. ; Uehara, K. ; Lestrade, M. ; Li, Z.Q. ; Li, Z.Q.
Author_Institution :
Crosslight Software Inc., Burnaby, BC, Canada
Abstract :
Based on Crosslight APSYS, amorphous Si (aSi:H)/amorphous SiGe:H (a-SiGe:H)/microcrystalline (¿c-Si) thin film triple junction solar cells are modeled. Basic physical quantities like band diagrams, optical absorption and generation are obtained. Quantum efficiency and l-V curves for individual junctions are presented for current matching analyses. The whole TJ cell I-V curves are also presented and the results are discussed with respect to the top surface ZnO:Al TCO layer affinity. The interface texture effect is modeled with FDTD (finite difference time domain) module and results for top junction are presented. The modeling results give possible clues to achieve high efficiency for TJ thin film solar cells.
Keywords :
Ge-Si alloys; II-VI semiconductors; aluminium; amorphous semiconductors; finite difference time-domain analysis; hydrogen; semiconductor thin films; solar cells; wide band gap semiconductors; zinc compounds; Crosslight APSYS; FDTD; I-V curves; SiGe:H; TCO layer affinity; ZnO:Al; amorphous silicon; band diagrams; finite difference time domain; microcrystalline thin film; optical absorption; optical generation; silicon based thin film; triple junction solar cells; Absorption; Amorphous materials; Finite difference methods; Optical films; Photovoltaic cells; Quantum dots; Semiconductor materials; Semiconductor thin films; Solar power generation; Transistors;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2009.5411414
