Title :
Ultra-fast programming of silicided polysilicon fuses based on new insights in the programming physics
Author :
Doorn, T.S. ; Altheimer, M.
Author_Institution :
Philips Res., High Tech Campus, Eindhoven
Abstract :
New insights in the programming physics of silicided polysilicon fuses integrated in 90 nm CMOS have led to a programming time of 100 ns, while achieving a resistance increase of 107. This is an order of magnitude better than any previously published result for the programming time and resistance increase individually. Simple calculations and TEM-analyses substantiate the proposed programming mechanism. The advantage of a rectangular fuse head over a tapered fuse head is shown and explained
Keywords :
MIS devices; electric fuses; silicon; 100 ns; 90 nm; CMOS technology; Si; TEM-analyses; nanotechnology; programming physics; silicided polysilicon fuses; ultra-fast programming; Current measurement; Electric breakdown; Electrical resistance measurement; Fuses; Physics; Pulse measurements; Silicides; Testing; Transmission line measurements; Voltage;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609439
