Fabrication and characterization of CMOSFETs on porous silicon for novel device layer transfer

Author

Sanda, Hiroyuki ; McVittie, James ; Koto, Makoto ; Yamagata, Kenji ; Yonehara, Takao ; Nishi, Yoshio

Author_Institution

Dept. of Electr. Eng., Stanford Univ., CA

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

679

Lastpage

682

Abstract

To develop a new device layer transfer technology with porous layer splitting, CMOS FETs were successfully fabricated on epitaxial layers with different thicknesses over porous silicon for the first time. FETs on more than 300nm thick epitaxial films show satisfactory electrical performance. A fabricated active layer was successfully transferred on a flexible plastic substrate for the first time. Transferred devices also show excellent performance. This technology is applicable to flexible single crystal ICs and to thermal cooling of active layers

Keywords

MOSFET; cooling; elemental semiconductors; porous semiconductors; semiconductor epitaxial layers; silicon; CMOSFET; Si; active layers; device layer transfer; epitaxial layers; flexible single crystal; integrated circuit; porous layer splitting; porous silicon; thermal cooling; CMOS technology; CMOSFETs; Cooling; Electric variables; FETs; Fabrication; MOS devices; Plastics; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609442

Filename

1609442