DocumentCode
3444249
Title
Fully integrated low phase noise VCO design in SiGe BiCMOS technology
Author
Xudong Wang ; Wang, Xudong ; Schelkle, Kurt ; Bacon, Peter
Author_Institution
CRDC, IBM Microelectron., Lowell, MA, USA
fYear
2001
fDate
2001
Firstpage
109
Lastpage
112
Abstract
Fully integrated voltage controlled oscillator (VCO) designs with low phase noise targeted for cellular communication in SiGe (silicon germanium) BiCMOS technology are discussed. The advantages of using IBM SiGe BiCMOS technology for fully integrated VCO designs are addressed in detail. Three fully integrated VCOs for wireless handset applications are reported with design approaches and testing results
Keywords
BiCMOS analogue integrated circuits; Ge-Si alloys; cellular radio; integrated circuit design; integrated circuit noise; phase noise; telephone sets; voltage-controlled oscillators; BiCMOS technology; SiGe; active device design; cellular communication; high Q inductor design; integrated low phase noise VCO design; low phase noise; testing results; voltage controlled oscillator; wireless handset applications; Active noise reduction; BiCMOS integrated circuits; Circuit noise; Frequency; Germanium silicon alloys; Noise figure; Phase noise; Silicon germanium; Tuning; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio and Wireless Conference, 2001. RAWCON 2001. IEEE
Conference_Location
Waltham, MA
Print_ISBN
0-7803-7189-5
Type
conf
DOI
10.1109/RAWCON.2001.947544
Filename
947544
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