Defect passivation with fluorine in a Ta/sub x/C/ high-K gate stack for enhanced device threshold voltage stability and performance

Author

Tseng, H.-H. ; Tobin, P.J. ; Hebert, E.A. ; Kalpat, S. ; Ramón, M.E. ; Fonseca, L. ; Jiang, Z.X. ; Schaeffer, J.K. ; Hegde, R.I. ; Triyoso, D.H. ; Gilmer, D.C. ; Taylor, W.J. ; Capasso, C.C. ; Adetutu, O. ; Sing, D. ; Conner, J. ; Luckowski, E. ; Chan, B.

Author_Institution

Technol. Solution Organ., Freescale Semicond. Inc., Austin, TX

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

696

Lastpage

699

Abstract

Using a novel fluorinated Ta_xC_y/high-k gate stack, we show breakthrough device reliability and performance improvements. This is a critical result since threshold voltage instability may be a fundamental problem and performance degradation for high-k is a concern. The novel fluorinated gate stack device exceeds the PBTI and NBTI targets with sufficient margin and has electron mobility comparable to the best polySi/SiON device on bulk Si reported so far

Keywords

electron mobility; fluorine; high-k dielectric thin films; passivation; reliability; tantalum compounds; thermal stability; NBTI target; PBTI target; Ta_xC_y high-k gate stack; TaC; defect passivation; device reliability; device threshold voltage stability; electron mobility; fluorinated gate stack device; fluorinated high-k gate stack; threshold voltage instability; Degradation; High K dielectric materials; High-K gate dielectrics; Niobium compounds; Passivation; Stability; Stress control; Threshold voltage; Titanium compounds; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609447

Filename

1609447