Title :
Single high-order transverse mode 850 nm VCSEL with micromachined surface relief
Author :
Shinada, S. ; Koyama, Fumio ; Nishiyama, Naoto ; Arai, Manabu ; Iga, Kenichi
Author_Institution :
P&I Microsystem Res. Cntr, Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
Summary form only given. We realized stable high-order mode GaAs VCSEL with surface micromachined relief. Single mode output power of over 3.5 mW and a record low series resistance of below 50 /spl Omega/ were obtained. The proposed structure is promising for use in high speed data links of beyond 10 Gb/s as well as in optical data storage.
Keywords :
III-V semiconductors; focused ion beam technology; gallium arsenide; laser cavity resonators; laser modes; micro-optics; micromachining; optical fabrication; surface emitting lasers; 3.5 mW; 50 ohm; 850 nm; GaAs; VCSEL; direct modulation; focused ion beam micromachining; high speed data links; large oxidation aperture; large oxide aperture; low series resistance; micromachined surface relief; narrow trenches; optical data storage; single high-order transverse mode; stable single mode operation; Apertures; Implants; Laser modes; Optical coupling; Oxidation; Power generation; Shape; Surface emitting lasers; Surface resistance; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-662-1
DOI :
10.1109/CLEO.2001.947546
