Title :
Heteroepitaxial growth of SiGe on Si by LPE for high efficiency solar cells
Author :
Wang, Yi ; Lu, Xuesong ; Huang, Susan R. ; Wang, Xiaoting ; Opila, Bobert ; Barnett, Allen
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Delaware, Newark, DE, USA
Abstract :
Heteroepitaxy SiGe on Si by liquid phase epitaxy (LPE) is a potential material for photovoltaic application. The Si0.05Ge0.95 solar cell with an energy gap of 0.72 eV can lead to a 7 percentage point increase in the Si-based multi-bandgap system or any multi-bandgap system that contains Si as the 1.1 eV solar cell. In this initial work we report first growth SixGe1-x with 0.5<x<1 on Si substrate from Sn solution by LPE. Several microns thick n type SiGe layer on (111)-oriented Si substrate has been grown. EDS shows 53 At% germanium concentration in the SiGe alloy. SEM shows continuity and uniformity.
Keywords :
Ge-Si alloys; X-ray chemical analysis; energy gap; liquid phase epitaxial growth; scanning electron microscopy; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; solar cells; SEM; Si; Si0.05Ge0.95; energy gap; heteroepitaxial growth; liquid phase epitaxy; multi-bandgap system; solar cell; Electrodes; Electrons; Germanium silicon alloys; Nanotubes; Photovoltaic cells; Photovoltaic systems; Radiative recombination; Silicon germanium; Solar power generation; Surface morphology;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2009.5411424
