Title :
High performance multi-gate pMOSFET using uniaxially-strained SGOI channels
Author :
Irisawa, Toshifumi ; Numata, Toshinori ; Tezuka, Tsutomu ; Usuda, Koji ; Nakaharai, Shu ; Hirashita, Norio ; Sugiyama, Naoharu ; Toyoda, Eiji ; Takagi, Shin-ichi
Author_Institution :
MIRAI-ASET, Kawasaki
Abstract :
We propose a novel multi-gate CMOS structure having a high mobility channel with optimal strain configuration, realized by appropriately merging globally-strained substrates with lateral strain relaxation technique. We report successful fabrication and operation of uniaxially-strained SGOI fin and tri-gate pMOSFETs. The improved SCE immunity and the performance enhancement are demonstrated
Keywords :
Ge-Si alloys; MOSFET; silicon-on-insulator; stress relaxation; SiGe; SiGe-on-insulator; fin pMOSFET; lateral strain relaxation; multigate pMOSFET; short channel effects immunity; CMOS technology; Capacitive sensors; Fabrication; FinFETs; Germanium silicon alloys; Insulation; MOSFET circuits; Merging; Silicon germanium; Uniaxial strain;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609451
