• DocumentCode
    3444350
  • Title

    High performance multi-gate pMOSFET using uniaxially-strained SGOI channels

  • Author

    Irisawa, Toshifumi ; Numata, Toshinori ; Tezuka, Tsutomu ; Usuda, Koji ; Nakaharai, Shu ; Hirashita, Norio ; Sugiyama, Naoharu ; Toyoda, Eiji ; Takagi, Shin-ichi

  • Author_Institution
    MIRAI-ASET, Kawasaki
  • fYear
    2005
  • fDate
    5-5 Dec. 2005
  • Firstpage
    709
  • Lastpage
    712
  • Abstract
    We propose a novel multi-gate CMOS structure having a high mobility channel with optimal strain configuration, realized by appropriately merging globally-strained substrates with lateral strain relaxation technique. We report successful fabrication and operation of uniaxially-strained SGOI fin and tri-gate pMOSFETs. The improved SCE immunity and the performance enhancement are demonstrated
  • Keywords
    Ge-Si alloys; MOSFET; silicon-on-insulator; stress relaxation; SiGe; SiGe-on-insulator; fin pMOSFET; lateral strain relaxation; multigate pMOSFET; short channel effects immunity; CMOS technology; Capacitive sensors; Fabrication; FinFETs; Germanium silicon alloys; Insulation; MOSFET circuits; Merging; Silicon germanium; Uniaxial strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-7803-9268-X
  • Type

    conf

  • DOI
    10.1109/IEDM.2005.1609451
  • Filename
    1609451
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3444350