DocumentCode :
3444435
Title :
Mobility enhancement due to volume inversion in [110]-oriented ultra-thin body double-gate nMOSFETs with body thickness less than 5 nm
Author :
Tsutsui, Gen ; Saitoh, Masumi ; Saraya, Takuya ; Nagumo, Toshiharu ; Hiramoto, Toshiro
Author_Institution :
Inst. of Ind. Sci., Tokyo Univ.
fYear :
2005
fDate :
5-5 Dec. 2005
Firstpage :
729
Lastpage :
732
Abstract :
This paper reports the first experimental demonstration of electron mobility enhancement due to the volume inversion at relatively high Ninv region (6times1012 cm-2 ) in (HO)-oriented UTB DG nMOSFETs with the tbody range of less than 5 nm. The physical origin of mobility enhancement is attributable to: (1) the suppression of surface roughness scattering by relaxed electric field; and (2) negligibly small degradation of the mobility limited by deltatSOI-induced scattering compared to SG that severely degrades mobility in (100)-oriented UTB DG nMOSFETs by quantum confinement
Keywords :
MOSFET; electron mobility; semiconductor device models; surface roughness; double-gate nMOSFET; electron mobility enhancement; quantum confinement; relaxed electric field; surface roughness scattering; volume inversion; Charge carrier density; Degradation; Effective mass; Electronic mail; Light scattering; MOSFETs; Particle scattering; Rough surfaces; Surface roughness; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
Type :
conf
DOI :
10.1109/IEDM.2005.1609456
Filename :
1609456
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3444435
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