Title :
Increased cell efficiency in InGaAs thin film solar cells with dielectric and metal back reflectors
Author :
Aydin, Koray ; Leite, Marina S. ; Atwater, Harry A.
Author_Institution :
Thomas J. Watson Labs. of Appl. Phys., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Compound single junction and multijunction solar cells enable very high photovoltaic efficiencies by virtue of employing different band gap materials in series-connected tandem cells to access the full solar spectrum. Researchers focused on improving the electrical properties of solar cells by optimizing the material growth conditions, however relatively little work to date has been devoted to light trapping and enhanced absorption in III-V compound solar cells using back reflectors. We studied absorption enhancement in InGaAs and InGaAsP thin film solar cells by means of numerical modeling. Flat dielectric and metal back reflectors that might be introduced into the solar cell via wafer-bonding, epitaxial lift-off or deposition techniques have been shown to increase the short circuit current and the photovoltaic efficiency of solar cells.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; light absorption; optical elements; solar cells; InGaAsP; absorption enhancement; band gap materials; cell efficiency; compound single junction solar cells; deposition techniques; dielectric reflectors; electrical properties; epitaxial lift-off; full solar spectrum; light trapping; material growth conditions; metal back reflectors; multijunction solar cells; photovoltaic efficiencies; photovoltaic efficiency; series-connected tandem cells; short circuit current; thin film solar cells; wafer-bonding; Absorption; Dielectric materials; Dielectric thin films; III-V semiconductor materials; Indium gallium arsenide; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Solar power generation; Thin film circuits;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2009.5411432