Title :
Modeling bipolar transistors using multibias S parameter sets
Author :
Biondi, T. ; Ferla, G. ; Palmisano, G. ; Privitera, G. ; Rinaudo, S.
Author_Institution :
Facolta di Ingegneria, Catania Univ., Italy
Abstract :
This paper presents a technique for accurate small-signal modeling of microwave bipolar transistors. Model parameters are extracted using measured S parameters in some bias points within the forward active region and then calculated in every point of that region by using a first order interpolation algorithm. The resulting multibias model shows excellent agreement with the measured data over the entire operating region. Moreover, accurate agreement is also achieved with the measured minimum noise figure even though the parameter extraction technique does not make use of noise measurements. Although model parameters are only extracted on measured data at 1 and 5 GHz, scattering parameters are accurately predicted up to 50 GHz, i.e. at a frequency exceeding the transistor FT
Keywords :
S-parameters; UHF bipolar transistors; equivalent circuits; interpolation; microwave bipolar transistors; parameter estimation; semiconductor device models; 1 GHz; 1 to 50 GHz; 5 GHz; bias points; bipolar transistors; first order interpolation algorithm; forward active region; microwave bipolar transistors; minimum noise figure; multibias S parameter sets; multibias model; parameter extraction; scattering parameters; small-signal modeling; Bipolar transistors; Data mining; Frequency measurement; Interpolation; Microwave theory and techniques; Noise figure; Noise measurement; Parameter extraction; Predictive models; Scattering parameters;
Conference_Titel :
Radio and Wireless Conference, 2001. RAWCON 2001. IEEE
Conference_Location :
Waltham, MA
Print_ISBN :
0-7803-7189-5
DOI :
10.1109/RAWCON.2001.947556