Title :
Oxygen-doped gesbte phase-change memory cells featuring 1.5 V/100-/spl mu/A standard 0.13/spl mu/m CMOS operations
Author :
Matsuzaki, N. ; Kurotsuchi, K. ; Matsui, Y. ; Tonomura, O. ; Yamamoto, N. ; Fujisaki, Y. ; Kitai, N. ; Takemura, R. ; Osada, K. ; Hanzawa, S. ; Moriya, H. ; Iwasaki, T. ; Kawahara, T. ; Takaura, N. ; Terao, M. ; Matsuoka, M. ; Moniwa, M.
Author_Institution :
Hitachi Central Res. Lab., Hitachi, Ltd., Tokyo
Abstract :
We demonstrated the operation of phase-change memory cells that enabled 1.5-V/100-muA programming through a tungsten-bottom-electrode contact with a diameter of 180 nm. This is the lowest power ever reported. This was achieved with oxygen-doped GeSbTe, and resulted from the high electric resistance of the germanium oxides in this material. Germanium oxides were also estimated to restrain the growth of crystal in GeSbTe, and our cells maintained a 10-year thermal lifetime at 100 degC
Keywords :
CMOS memory circuits; antimony compounds; chalcogenide glasses; doping; germanium compounds; phase change materials; random-access storage; 0.13 micron; 1.5 V; 10 year; 100 C; 100 muA; 180 nm; CMOS operations; GeSbTe; crystal growth; phase-change memory cells; tungsten-bottom-electrode contact; CMOS technology; Fabrication; Germanium; Nonvolatile memory; Phase change materials; Phase change memory; Space vector pulse width modulation; Testing; Tungsten; Voltage;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609459
