Oxygen-doped gesbte phase-change memory cells featuring 1.5 V/100-/spl mu/A standard 0.13/spl mu/m CMOS operations

Author

Matsuzaki, N. ; Kurotsuchi, K. ; Matsui, Y. ; Tonomura, O. ; Yamamoto, N. ; Fujisaki, Y. ; Kitai, N. ; Takemura, R. ; Osada, K. ; Hanzawa, S. ; Moriya, H. ; Iwasaki, T. ; Kawahara, T. ; Takaura, N. ; Terao, M. ; Matsuoka, M. ; Moniwa, M.

Author_Institution

Hitachi Central Res. Lab., Hitachi, Ltd., Tokyo

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

738

Lastpage

741

Abstract

We demonstrated the operation of phase-change memory cells that enabled 1.5-V/100-muA programming through a tungsten-bottom-electrode contact with a diameter of 180 nm. This is the lowest power ever reported. This was achieved with oxygen-doped GeSbTe, and resulted from the high electric resistance of the germanium oxides in this material. Germanium oxides were also estimated to restrain the growth of crystal in GeSbTe, and our cells maintained a 10-year thermal lifetime at 100 degC

Keywords

CMOS memory circuits; antimony compounds; chalcogenide glasses; doping; germanium compounds; phase change materials; random-access storage; 0.13 micron; 1.5 V; 10 year; 100 C; 100 muA; 180 nm; CMOS operations; GeSbTe; crystal growth; phase-change memory cells; tungsten-bottom-electrode contact; CMOS technology; Fabrication; Germanium; Nonvolatile memory; Phase change materials; Phase change memory; Space vector pulse width modulation; Testing; Tungsten; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609459

Filename

1609459