Ultra-small high-speed bipolar transistor with sidewall silicide technology

Author

Nakamura, Tohru ; Onai, Takahiro ; Homma, Noriyuki ; Shiba, Takeo ; Tamaki, Yoichi

Author_Institution

Hitachi Ltd., Tokyo, Japan

fYear

1991

fDate

9-10 Sep 1991

Firstpage

11

Lastpage

16

Abstract

A tutorial review of high-performance BiCMOS technologies is presented, and a novel bipolar transistor structure is proposed or advanced future BiCMOS VLSIs. It is pointed out that high-performance BiCMOS technologies have led to fabrication of high-speed and high-packing-density VLSIs. Double polysilicon bipolar transistors significantly improve the characteristics of BiCMOS VLSIs. It is concluded that self-aligned n-p-n and p-n-p transistors and low-voltage-operated CMOS will be included in future high-performance BiCMOS VLSIs

Keywords

BIMOS integrated circuits; VLSI; bipolar transistors; integrated circuit technology; BiCMOS technologies; Si; double polysilicon devices; high-packing-density VLSIs; high-speed bipolar transistor; low-voltage-operated CMOS; self-aligned transistors; sidewall silicide technology; ultrasmall device; BiCMOS integrated circuits; Bipolar transistors; CMOS technology; Delay; Inverters; MOS devices; Power dissipation; Silicides; Very large scale integration; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-0103-X

Type

conf

DOI

10.1109/BIPOL.1991.160946

Filename

160946