Title :
Silane-free PECVD silicon carbon nitride (SiCxNy) passivation and anti-reflection coatings for high efficiency silicon solar cells
Author :
Kang, M.H. ; Ebong, A. ; Rounsaville, B. ; Rohatgi, A. ; Hong, J.
Author_Institution :
Univ. Center of Excellence for Photovoltaics Res. & Educ., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
Industrialized silicon solar cells were fabricated using silane-free silicon carbon nitride (SiCxNy) film as an antireflection (AR) and surface passivation layer. Sixtron Advanced Materials has developed a gas generation system to deposit the dielectric film that uses a polymeric solid source. Sixtron eliminates the cost and hazards associated with storing and handling pyrophoric silane gas. The electrical and optical properties of the new AR coating layer are investigated and compared to the SiNx films coated with silane (SiH4) gas. We tuned the film properties using NH3 flow rate from previous work. In this work, we further optimized the film properties. As plasma power increases, interface trap density (Dit) and flat band charge (Qfb) are reduced while refractive index and extinction coefficient remain similar. Screen-printed 149cm2 Czochralski (CZ) Si solar cells with SiCxNy AR coating layer provides an energy conversion efficiency of 17.2%, which is comparable to that of conventional SiNx coated solar cells.
Keywords :
antireflection coatings; crystal growth from melt; dielectric thin films; elemental semiconductors; interface states; passivation; semiconductor thin films; silicon compounds; solar cells; Si-SiCxNy; Sixtron Advanced Materials; antireflection coatings; energy conversion efficiency; extinction coefficient; flat band charge; flow rate; interface trap density; plasma power; polymeric solid source; refractive index; screen-printed Czochralski solar cells; silane gas; silane-free PECVD silicon carbon nitride; silicon solar cells; surface passivation; Coatings; Dielectric materials; Optical films; Optical materials; Passivation; Photovoltaic cells; Semiconductor films; Silicon carbide; Silicon compounds; Textile industry;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2009.5411436