Title :
Conductive bridging RAM (CBRAM): an emerging non-volatile memory technology scalable to sub 20nm
Author :
Kund, Michael ; Beitel, Gerhard ; Pinnow, Cay-Uwe ; Röhr, Thomas ; Schumann, Jörg ; Symanczyk, Ralf ; Ufert, Klaus-Dieter ; Müller, Gerhard
Author_Institution :
Infineon Technol. AG, Munich
Abstract :
We report on the electrical characterisation of nanoscale conductive bridging memory cells, composed of a thin solid state electrolyte layer sandwiched between an oxidizable anode and an inert cathode. Low power resistive switching operation, the large scalability potential including multi-level-capability (MLC) and the investigated reliability aspects, like retention at elevated temperature, operating temperature and endurance, make CBRAM a very promising non-volatile emerging memory technology
Keywords :
anodes; cathodes; low-power electronics; random-access storage; conductive bridging RAM; inert cathode; nanoscale conductive bridging memory cells; nonvolatile memory; oxidizable anode; resistive switching operation; thin solid state electrolyte layer; Bridge circuits; Current measurement; Nonvolatile memory; Phase change random access memory; Random access memory; Read-write memory; Scalability; Solid state circuits; Temperature measurement; Voltage;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609463
