Title :
Excellent resistance switching characteristics of Pt/SrTiO/sub 3/ schottky junction for multi-bit nonvolatile memory application
Author :
Sim, Hyunjun ; Choi, Hyejung ; Lee, Dongsoo ; Chang, Man ; Choi, Dooho ; Son, Yunik ; Lee, Eun-Hong ; Kim, Wonjoo ; Park, Yoondong ; Yoo, In-Kyeong ; Hwang, Hyunsang
Author_Institution :
Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol.
Abstract :
We have investigated single crystal Nb-doped SrTiO3 in terms of its potential utility in nonvolatile memory applications. Compared with polycrystalline oxide (Nb2O5, ZrO x and Cr-SrTiO3), the Pt/single crystal Nb:SrTiO 3 Schottky junction exhibits excellent memory characteristics including uniformity of set/reset bias, die-to-die reproducibility, data retention at high temperature, reliability under cycle stress, and multi-bit operation characteristics. The switching mechanism might be explained by modulation of the Schottky barrier height by charge trapping at the interface
Keywords :
Schottky barriers; niobium; platinum; random-access storage; strontium compounds; titanium compounds; Pt-SrTiO3; Schottky barrier height; Schottky junction; SrTiO3:Nb; charge trapping; cycle stress; data retention; multibit nonvolatile memory application; multibit operation characteristics; polycrystalline oxide; resistance switching; set/reset bias; Degradation; Electrodes; Materials science and technology; Niobium; Nonvolatile memory; Read-write memory; Reproducibility of results; Stress; Surface resistance; Surface treatment;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609464
