Title :
85nm gate length enhancement and depletion mode InSb quantum well transistors for ultra high speed and very low power digital logic applications
Author :
Datta, S. ; Ashley, T. ; Brask, J. ; Buckle, L. ; Doczy, M. ; Emeny, M. ; Hayes, D. ; Hilton, K. ; Jefferies, R. ; Martin, T. ; Phillips, T.J. ; Wallis, D. ; Wilding, P. ; Chau, R.
Author_Institution :
Components Res., Intel Corp., Hillsboro, OR
Abstract :
We demonstrate for the first time 85nm gate length enhancement and depletion mode InSb quantum well transistors with unity gain cutoff frequency, fT, of 305 GHz and 256 GHz, respectively, at 0.5V VDS, suitable for high speed, very low power logic applications. The InSb transistors demonstrate 50% higher unity gain cutoff frequency, fT, than silicon NMOS transistors while consuming 10 times less active power
Keywords :
III-V semiconductors; indium compounds; logic circuits; low-power electronics; quantum well devices; 0.5 V; 256 GHz; 305 GHz; 85 nm; InSb; depletion mode; digital logic applications; gate length enhancement; quantum well transistors; silicon NMOS transistors; Cutoff frequency; Epitaxial layers; Etching; Gallium arsenide; Logic devices; MOSFETs; Manufacturing; Photonic band gap; Silicon; Substrates;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609466
